Angebote zu "Junction-A" (10 Treffer)

Kategorien

Shops

FUSION OPTICAL FIBER COUPLING: EXPERIMENT AND M...
79,00 € *
ggf. zzgl. Versand

Over the past two decades, a mechanism process to obtain Single Mode Fiber (SMF) coupling has emerged as a visible means for fiber optic communication. Generally, the process is always described at initial input and output result, whereas the source waves transmitting along the coupled fibers have not been fully understood. Although modeling of fiber coupling provides good understanding of the process, but experimentally the determination of the coupling range has not been clearly established. In applications optical fiber coupling is used to control and to apply power propagation from one fiber to another by splitting it as a junction. However, the coupling fiber fabrication is complicated especially at the junction. This may be due to the fact that at coupling region some parameters are affected by the structural and geometrical fiber itself. This book experimentally describes the better behavior and operation of fiber couplers at different side of measurements. Models are also proposed, and compared to experiment.

Anbieter: Dodax
Stand: 30.11.2020
Zum Angebot
SOME NOVEL EXPERIMENTS ON OPAMP
49,00 € *
ggf. zzgl. Versand

This is a compilation of four dissertations based on experimental projects presented to Vidyasagar University by four final year undergraduate students of Jhargram Raj College, Jhargram-721507, West Bengal, India, under my supervision. The topics were selected while I was giving instructions on laboratory work to undergraduate students there. The subjects embody a detailed idea of OPAMP in electronics, its different applications, some new experiments based on OPAMP, which yield qualitative and quantitative information about OPAMP. The second chapter is based on the idea of OPAMP. The third chapter is based on the characteristics of differential amplifier, logarithmic amplifier, and antilogarithmic amplifier mode of OPAMP. Exhaustive studies on measuring the thermo-emf of a thermo couple with two and one junction using inverting amplifier mode of OPAMP is given in chapter four. Finally in the fifth chapter a dissertation on the measurement of the variation of Zener breakdown voltage with temperature using differential amplifier mode of OPAMP is given.

Anbieter: Dodax
Stand: 30.11.2020
Zum Angebot
Ultrashort pulse laser in ablation of hard dent...
55,90 € *
ggf. zzgl. Versand

Highlights: - The book is about the interaction of ultra short laser pulse in 40ps range with dental hard tissue(Enamel, Dentin and Dentin-enamel junction)wavelength. - 2nd and 4th harmonic generation of Nd:YAG laser interaction with dental tissue was studied extensively. - Study of crater depth morphology using scanning electron-microscope. - Study of crater depth in florescence microscope in reflection mode . - Ablation depth was enhanced by using consecutive pulses leaving the crater diameter unchanged. - Crater diameter depends both on laser FWHM and on ablation threshold, a model has been developed.

Anbieter: Dodax
Stand: 30.11.2020
Zum Angebot
User friendly Intelligent traffic signal
49,00 € *
ggf. zzgl. Versand

Today, most of the traffic lights in India are controlled by Programmable Logic Control (PLC). This controller is chosen due to its higher cost and it is not user friendly Programming language. The program could be modified to suit the requirement of any particular traffic lights. This project used the intelligent traffic signal as a controller and it was designed to control the 4-junctions of traffic light. There was 3 mode of operation, Normal mode, Emergency mode and Night mode. In Normal mode, the operation of traffic light have been setting based on the study conducted on the numbers of vehicles move on the road. The traffic light automatically changes to emergency mode operation when there have the emergency vehicle such as police, firebrigade and ambulance use that junction. Third mode is night mode which operate during less traffic are using that junction. The IR transceivers have been used to implement this operation mode.

Anbieter: Dodax
Stand: 30.11.2020
Zum Angebot
Catastrophic optical damage
29,00 € *
ggf. zzgl. Versand

High Quality Content by WIKIPEDIA articles! Catastrophic optical damage is a failure mode of high-power semiconductor lasers. It occurs when the semiconductor junction is overloaded by exceeding its power density and absorbs too much of the produced light energy, leading to melting and recrystallization of the semiconductor material at the facets of the laser. This is often colloquially referred to as "blowing the diode." The affected area contains a large number of lattice defects, negatively affecting its performance. If the affected area is sufficiently large, it can be observable under optical microscope as darkening of the laser facet, and/or as presence of cracks and grooves. The damage can occur within a single laser pulse. Catastrophic optical damage is one of the limiting factors in increasing performance of semiconductor lasers. It is the primary failure mode for AlGaInP/AlGaAs red lasers. Short-wavelength lasers are more susceptible to COD than long-wavelength ones. The typical values for COD in industrial products range between 12-20 MW/cm2.

Anbieter: Dodax
Stand: 30.11.2020
Zum Angebot
Bipolar Junction Transistor
45,00 € *
ggf. zzgl. Versand

A bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. This mode of operation is contrasted with unipolar transistors, such as field-effect transistors, in which only one carrier type is involved in charge flow due to drift. By design, most of the BJT collector current is due to the flow of charges injected from a high-concentration emitter into the base where they are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.

Anbieter: Dodax
Stand: 30.11.2020
Zum Angebot
Power Semiconductors
176,00 CHF *
ggf. zzgl. Versand

The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.

Anbieter: Orell Fuessli CH
Stand: 30.11.2020
Zum Angebot
Scratching the Surface -  An Introduction to Ph...
39,99 € *
ggf. zzgl. Versand

A beginnerÕs introduction to Optics, Thin Films, Lasers and Crystals. Parts 1-3 cover: absorption, angle of incidence, antireflection, bandgap, birefringence, Bravais, lattice, damage, dielectric, crystallography, grating, diode, electric field, diffraction, oscillator, electro-optic, emission, energy gap, poling, fiber optic, fluorescence, frequency, geometrical optics, glide plane, graded-index, grinding, group velocity, harmonic generation, index, interference, filters, cavity, diodes, pumping, laser, light, melting glass, Miller indices, mode-locking, molding, nonlinear, semiconductor, nucleation, optical cavity, coatings, resonator, phase shift, phase velocity, phonon, photon, p-n junction, point group, polishing, population inversion, Q-switched, saturable absorber, screw axis, semiconductor, solid state, space group, substrate, sum-frequency, tuning, temperature-bandwidth, thin films, transmission, unit cell, unstable resonator, walkoff, wave vector, waveguide, wavelengthÉand much more. Enjoy

Anbieter: Thalia AT
Stand: 30.11.2020
Zum Angebot
Power Semiconductors
124,99 € *
ggf. zzgl. Versand

The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.

Anbieter: Thalia AT
Stand: 30.11.2020
Zum Angebot